5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101

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大家运用的是单向晶闸管，也便是人们常说的一般晶闸管，它是由四层半导体资料组成的，有三个PN结，对外有三个电极〔图2(a) 〕∶层P型半导体引出的电极叫阳极A，第三层P型半导体引出的电极叫操控极G，第四层N型半导体引出的电极叫阴极K。从晶闸管的电路符号〔图2(b) 〕能够看到，它和二极管一样是一种单独向导电的器材，关键是多了一个操控极G，这就使它具有与二极管彻底不同的工作特性。

以硅单晶为根本资料的P1N1P2N2四层三端器材,起始于1957年，由于它的特性类似于真空闸流管，所以国际上通称为硅晶体闸流管，简称晶闸管T，又由于晶闸管初的在静止整流方面，所以又被称之为硅可控整流元件，简称为可控硅SCR.

在性能上，可控硅不仅具有单向导电性，并且还具有比硅整流元件（俗称”死硅”)更为可贵的可控性。它只有导通和关断两种状态。

可控硅能以毫安级电流操控大功率的机电设备，假如超过此功率，因元件开关损耗明显添加，答应经过的均匀电流相下降，此时，标称电流应降级运用。

可控硅的长处许多，例如:以小功率操控大功率，功率放大倍数高达几十万倍;反响极快，在微秒级内注册、关断;无触点运行，无火花、无噪音;效率高，成本低等等。

可控硅的弱点:静态及动态的过载才能较差;简单受搅扰而误导通。可控硅从外形上分类主要有:螺栓形、平板形和平底形。

可控硅元件的结构

不管可控硅的外形如何，它们的管芯都是由P型硅和N型硅组成的四层P1N1P2N2结构。见图1。它有三个PN结(J1、12、J3)，从J1结构的P1层引出阳极A，从N2层引出阴级K，从P2层引出操控极G，所以它是一种四层三端的半导体器材。

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Product Description: ABB XVC767AE102 3BHB007209R0102 The main control board serves as the control center of the drive

The main control board is the control center of the driver, including the control power supply, the generation of the modulated pulse, the control mode and the protection logic. It accepts the signal from the panel and the external control interface, controls and protects the work of the RF unit, and it transmits the status signal of the driver operation to the panel and the external control interface. GBT main control board mainly adopts high frequency induction heating main control board and two drive main high frequency board technology adopts SG3525A as FWM pulse formation, the output pulse prerate ranges from 20XHZ-56OKHZ, and the pulse interval is 180 degrees each other. The dead time can be adjusted by itself. It can be applied to voltage and power regulation by chopper of IGBT full-bridge inverter series resonant induction heating device.

IG staring at T high frequency control board, SG352A is mainly used as FPWM impulse formation, the output pulse frequency range is 2OKHz-5OKHiz, the interval in the number is 10 degrees each other, the dead time can be adjusted by itself. It can be applied to frequency and power regulation of IGBT full-bridge inverter series resonant heating device. Power range :1OKV-120ANW, the control board wiring less centralized control, no need to debug, the working power supply voltage for three AC double 18V/1A and four 22V/O.5A power supply. With over current, over pressure water, a variety of state indicators

Switch type hall is also provided

Protection interface and linear Hall protection interface, full bridge inverter IGBT drive circuit, this board can directly assemble IGBT high frequency induction heating device.